Samsung Develops Industry’s First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications
512GB capacity DDR5 module made possible by an 8-layer TSV structure HKMG material reduces power by 13 percent while doubling the speed of DDR4
Samsung Electronics, the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.
Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development, said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics. By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond.
Mar 25, 2021 at 11:17